Invited Speakers

Growth and doping in oxide MBE by intentional and unintentional suboxide sources
Oliver Bierwagen, Paul Drude Institute, Germany

Thermal Laser Epitaxy: new opportunities for epitaxial growth
Wolfgang Braun, Max Planck Institute for Solid State Research, Germany
Punctuated growth of 2 micron quantum dash lasers
Rafael Chu, Korea Institute of Science and Technology, South Korea
Elemental Topological Dirac Semimetal α-Sn with High Quantum Mobility
Le Duc Anh, University of Tokyo, Japan
Demonstration of Sc0.2Al0.8N HEMT structures with a sheet resistance of 150 Ω/□ and a sheet charge of 5.9x1013cm-2 with phase pure, metal rich growth
Zachary Engel, Georgia Institute of Technology, USA
Development of MWIR/LWIR LEDs and Photodiodes for gas sensing application
Hiromi Fujita, Asahi Kasei Microdevices Corporation, Japan
New strategies in nanoelectronic 3D heterogeneous integration
Chris Hinkle, University of Notre Dame, USA
In-situ pulsed laser interference patterning for the site-controlled MBE growth of Nanostructures
Mark Hopkinson, University of Sheffield, UK
MBE grown Two-Dimensional Materials
Matthieu Jamet, Spintec, France
Quantum dot formation process for InP-based 1.3 µm lasers
Vinayakrishna Joshi, University of Kassel, Germany
What really happens during oxide thin film deposition?
Tiffany Kaspar, Pacific Northwest National Laboratory, USA
Mechanisms and applications for remote epitaxy of III-V semiconductors and Heusler compounds
Jason Kawasaki, University of Wisconsin-Madison, USA
Molecular beam epitaxy of functional complex 4d and 5d transition metal oxides
Yoshiharu Krockenberger, NTT Basic Research Laboratories, Japan
New method of terahertz detection in 2D electron gases based on an in-plane photoelectric effect
Wladislaw Michailow, University of Cambridge, UK
Engineering reliability against dislocations in InAs quantum dot lasers on silicon
Kunal Mukherjee, Stanford University, USA
New directions in MBE growth of phosphide materials
Minjoo Larry Lee, University of Illinois Urbana-Champaign, USA
Metastable alpha tin films grown by MBE and their topological properties
Hong Lu, Nanjing University, China
Epitaxial growth of Cr-based 2D magnets
Akhil Rajan, University of St Andrews, UK
From research to production: how MBE can unlock GaN-on-Si technology
Fabrice Semond, EasyGaN & CNRS/CRHEA, France
The role of tunnel junctions in the development of novel nitride devices
Czeslaw Skierbiszewski, Institute of High Pressure Physics, Poland
MBE of topological semimetal heterostructures: from novel quantum transport to spintronics
Nitin Samarth, Penn State University, USA
MBE of topological thin films
Susanne Stemmer, University of California Santa Barbara, USA
Room temperature single photon emission from GaN QDs grown by MBE
Sebastian Tamariz, EPFL, Switzerland
2-Dimensional magnetism
Faxian Xiu, Fudan University, China
Direct epitaxy of InAs/GaAs quantum-dot lasers on SOI for silicon photonics
JianJun Zhang, Institute of Physics CAS, China