Fabrice Semond is Research Director at the CNRS and co-founder
of the startup EasyGaN. His work contributes to understand and simplify
epitaxial growth of GaN-on-Si using molecular beam epitaxy and to demonstrate
the many advantages of this technology. For example, he is at the origin of the
fabrication of the first AlGaN/GaN high electron mobility transistor grown by
MBE on silicon substrates. He is the author of more than 200 publications and 9
patents.
Environmental Statement Modern Slavery Act Accessibility Disclaimer Terms & Conditions Privacy Policy Code of Conduct About IOP
© 2021 IOP All rights reserved.
The Institute is a charity registered in England and Wales (no. 293851) and Scotland (no. SC040092)