Dr Sebastian Tamariz

Sebastian Tamariz obtained his PhD in photonics in 2019 from École Polytechnique Fédérale de Lausanne (EPFL), Switzerland, while pursuing research in the Laboratory for Advanced Semiconductors for Photonics and Electronics (LASPE) with Nicolas Grandjean. During this time, he studied the NH₃-MBE growth and optical properties of GaN quantum dots. He continued at LASPE as a Postdoc, where he studied the growth and efficiency of InGaN quantum wells grown by plasma MBE. Currently, he is working in France at the Université Côte d’Azur, Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications (CRHEA). His research focuses on the growth of GaN based high electron mobility transistors on Si substrates by MBE.