Eric Tournié is a Professor at Université de Montpellier (F) since 2002 where he led the mid-IR research group of Institut d’Electronique, UMR CNRS 5214, from 2005 to 2019. His current work focuses on the epitaxial integration of GaSb-based devices on Si platforms. From 1990 to 1993 he was with the Max-Planck-Institute in Stuttgart (D), working on InAs-based, highly-strained heterostructures on InP and GaAs substrates. In 1993 he moved to the Paul-Drude-Institute in Berlin (D) before joining CRHEA/CNRS in Valbonne (F) to work on ZnSe-based heterostructures for blue-green lasers. In 1999 he launched a program on GaInNAs heterostructures for telecom applications. In 2019-20 Eric was a JSPS visiting research fellow at The University of Tokyo. He is a member of the Int. Advisory/Steering Committee of several conference series, inc. the Int. Molecular-Beam Epitaxy conference (MBE), the Int. Symposium on Compounds Semiconductors (ISCS), the Euro-MBE conference series. He chaired the ISCS 2014, MIOMD 2014 and IC-MBE 2016 conferences. From 2010 to 2016 Eric was a member of the Editorial Board of J of Physics D:Applied Physics, and he is currently an associate editor of Electronics Letters. Eric has co-authored ~300 refereed journal and conference publications, and gave ~80 invited talks at international conferences.
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