Prof. Amalia Patane

University of Nottingham, UK
Studied at the University of Rome “La Sapienza” where she received her MSc in Physics (1994) and PhD (1998). She then moved to the School of Physics and Astronomy at Nottingham where she has been Professor of Physics (since 2011) and Director of Research (2019-23). Her research achievements  were recognised by the Sir Charles Vernon Boys Medal and Prize of the Institute of Physics (2007), an EPSRC Advanced Research Fellowship (2004-09), a Leverhulme Trust Research Fellowship (2017-19), a Chinese Academy of Science (CAS) President’s International Fellowship Award (2018-19), and an honorary professorship at the Institute of Semiconductors, CAS, Beijing (2019- to date). Since 2015, Patanè is the UK Director and Council member of the European Magnetic Field Laboratory, a national facility of the EPSRC for development and use of high magnetic fields. Also, she leads at Nottingham the EPI2SEM facility for the EPitaxial growth and in situ analysis of 2-dimensional SEMiconductors (https://bit.ly/3zN00dx).

Talk title: A new facility for growth and study in UHV of two-dimensional semiconductors

For several decades, silicon-based devices have dominated modern technologies. However, existing silicon-based technologies are reaching physical limits that could halt further advances. Two-dimensional semiconductors (2SEM) present an opportunity to overcome these challenges. Here, I will review my research on 2SEM and present a bespoke facility (EPI2SEM) for the EPitaxial growth and In situ analysis of 2SEM. By integration of growth, advanced microscopy and spectroscopy in UHV, we can create atomically-thin semiconductors with engineered physical properties beyond the current state-of-the-art.