Prof. Alastair Stacey


RMIT University, Australia
Alastair Stacey, Professor of Physics at RMIT University and Managing Principal Research Physicist at the Princeton Plasma Physics Laboratory (PPPL), is an expert in diamond technologies, including diamond synthesis by plasma vapor deposition. He has extensive experience in the study of diamond materials and surface science for quantum applications. He has developed novel diamond growth and surface termination chemistries for applications ranging from biomedical sensors to electron emitters and quantum sensors. These take advantage of diamond’s superlative material properties, including extreme electron affinities, biocompatibility and long coherence properties for quantum defects.

Talk title: Diamond surface science for quantum and electronics applications
Diamond materials possess superlative properties, ideal for room temperature quantum and various electronics applications. However, realization of devices in such applications inevitably requires development of a toolbox of surface and interface science and functionalities. While diamond’s lack of solid-state oxide is a boon in this regard, it has shown to be an otherwise challenging surface material to control. In this presentation I will detail our efforts to identify crystallographic defects at the diamond surface [1], how these relate to epitaxial growth processes and the potential impact of such defects on electronic device parameters, such as band bending  [2] and Fermi level pinning. I will describe our efforts to control the surface chemistry of diamond, to create novel surface termination chemistries and to fabricate quantum electronic and electron emission devices, including for medical diagnostic imaging applications  [3]. 

I will describe our efforts to develop a toolbox of diamond surface chemistries and interfaces, including silicon [4] related terminations, interfacing with cubic silicon carbide [5], and the development of extreme electron affinity surfaces [6]. To support these surface chemistry studies we have established a protocol for quantification of oxygen terminated species on the diamond surface, showing that traditional x-ray photoelectron spectroscopy assignments do not apply [7] and detailing how a combination of x-ray photoelectron and absorption spectroscopies can be used to robustly identify and quantify otherwise problematic surface moieties. This expanding toolbox of surface terminations and control suggests that potentially stable surface transfer doping is possible [8], as well as the development of record ultra-low work-function surfaces.

[1]          A. Stacey et al., Evidence for Primal Sp2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources, Adv. Mater. Interfaces 6, 1801449 (2019).
[2]          D. A. Broadway et al., Spatial Mapping of Band Bending in Semiconductor Devices Using in Situ Quantum Sensors, Nat. Electron. 1, 502 (2018).
[3]          D. J. McCloskey, N. Dontschuk, A. Stacey, C. Pattinson, A. Nadarajah, L. T. Hall, L. C. L. Hollenberg, S. Prawer, and D. A. Simpson, A Diamond Voltage Imaging Microscope, Nat. Photonics 16, 10 (2022).
[4]          A. K. Schenk, M. J. Sear, N. Dontschuk, A. Tsai, K. J. Rietwyk, A. Tadich, B. C. C. Cowie, L. Ley, A. Stacey, and C. I. Pakes, Development of a Silicon–Diamond Interface on (111) Diamond, Appl. Phys. Lett. 116, 71602 (2020).
[5]          A. Tsai et al., Epitaxial Formation of SiC on (100) Diamond, ACS Appl. Electron. Mater. 2, 2003 (2020).
[6]          K. M. O’Donnell, M. T. Edmonds, A. Tadich, L. Thomsen, A. Stacey, A. Schenk, C. I. Pakes, and L. Ley, Extremely High Negative Electron Affinity of Diamond via Magnesium Adsorption, Phys. Rev. B 92, 35303 (2015).
[7]          N. Dontschuk et al., X-Ray Quantification of Oxygen Groups on Diamond Surfaces for Quantum Applications, Mater. Quantum Technol. (2023).
[8]          B. Oslinker, D. Hoxley, A. Tadich, A. Stacey, S. Yianni, R. Griffin, E. Gill, C. I. Pakes, and A. K. Schenk, Surface Transfer Doping of Oxidised Silicon-Terminated (111) Diamond Using MoO3, Diam. Relat. Mater. 133, 109712 (2023).


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