β-Ga2O3 Processing: An Investigation of Advanced Gate Dielectrics
Jacob Asher[1], Jacob Mitchel[1], Jon Evans[1], Stefan Zeiske[1], Antonio Martinez[1], Dan Gillard[1], Craig Fisher[1], Zeyu Chi[1], Amador Perez-Tomas[1], Ekaterine Chikoidze[1], Mike Jennings[1],
[1] Swansea University, Swansea, United Kingdom
Computational Modelling of Wide Band Gap Transparent Conducting Oxide Sb2O5
Ke Li[1] , Joe Willis[1] , David Scanlon[1]
[1] University College London, London , United Kingdom
Degenerate Doping and Band Gap Renormalisation in β-Ga₂O₃: Computational Insights
Joe Willis[1] , David Scanlon[1]
[1] University College London, London , United Kingdom
Incorporation of Bismuth into In2O3 and Ga2O3 thin films to introduce intermediate levels
Yoko Taniguchi[1] , Hiroyuki Nishinaka[1] , Kazuki Shimazoe[1] , Toshiyuki Kawaharamura[2] , Masahiro Yoshimoto[1]
[1] Kyoto Institute of Technology, Kyoto, Japan,
[2] Kochi University of Technology, Kami, Japan
Probing sub-bandgap absorption in α-Ga₂O₃ using the constant photocurrent method
David Nicol[1], Steve Reynolds[2], Joseph Roberts[3], Paul Chalker[3], Fabien Massabuau[1]
[1] University Of Strathclyde, Glasgow, United Kingdom
[2] University of Dundee, Dundee, United Kingdom
[3] University of Liverpool, Liverpool, United Kingdom
Piezoelectric property and strain response of defected β-Ga2O3
Lijie Li[1]
[1] Swansea University, Swansea, United Kingdom
Metrology in Manufacturing Compound Semiconductors for Power Electronics
Sebastian Wood[1], Dongkuk Kim[1], George Koutsourakis [1]
[1] National Physical Laboratory, Teddington, Middlesex, TW11 0LW, UK
Thermodynamic control of phases and structural phase transition in Ga2O3 thin films
Amit Khare [1], Igor Shvets[1]
[1] CRANN and School of Physics, Trinity College Dublin, Dublin 2, Ireland
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