Invited Speakers

Current Transport in AlN Schottky Barrier Diode
Dr. Takuya Maeda, University of Tokyo
Exploring electrochemical etching as a tool for cladding engineering in III-nitride laser diodes
Dr. Marta Sawicka, Institute of High Pressure Physics, Polish Academy of Sciences (UNIPRESS)

Dr Takuya Maeda is a Lecturer at The University of Tokyo. He received his PhD degree from Kyoto University in 2020. Before the current position, he worked at Cornell University as a KIC postdoc fellow for 2 years. His research interest focuses on material science and device physics in wide-bandgap semiconductors.

Dr Marta Sawicka is an assistant professor at the Institute of High Pressure Physics PAS (Poland) in the Molecular Beam Epitaxy Laboratory. She earned her MSc in Materials Science and Engineering from the Warsaw University of Technology in 2008 and her PhD in Physics in 2015. Her work focuses on plasma-assisted molecular beam epitaxy and the use of porous GaN in devices and quantum structures.

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