Abstract: Modeling and validation of process-relevant reaction mechanisms for commercial atomic scale processing plasmas
Plasma modeling tools are used by semiconductor hardware companies to increase their understanding of plasma systems and enable rapid solutions to commercial challenges. Computational models must be timely, validated, and contain process-relevant chemistry if they are to provide advantages over traditional lab-based hardware and process development methods. However, validation of process-relevant plasma chemistry reaction mechanisms in commercial plasma systems is often challenged by lack of optical access for in-situ diagnostics. In this work, the impacts of utilizing reliable plasma modeling techniques together with process-relevant reaction mechanisms will be considered from an industrial perspective. Methods for compiling and validating these mechanisms in commercial platforms will be discussed. An example including the compilation and experimental validation of a CF4/O2 reaction set will be given. A 0D global model is used to predict densities of reactive ion and neutral species in the plasma region of a commercial inductively coupled plasma. Modeling results are compared to experimental measurements obtained in an Oxford Instruments Plasma PlasmaPro100 – Cobra ICP RIE Etch reactor. The mechanism is then extended to a 2D hybrid plasma model to predict species densities and fluxes that may contribute to soot formation on chamber walls during compound semiconductor etch processes. Results from the validated models can be used to predict operating conditions that lead to optimal process outcomes, ultimately leading to reduced time and cost for commercial hardware and process development.